sapphire wafer for epitaxy

EPI-Ready Polished Saoohire Substrate Crycal Materials 99.995% High Purity,2-3Grade Monocrystalline AL2O3 Wafer Surface Orientation C-axis(0001)offset to M(1-100)/A(11-20) 0.2°±0.05° / 0.3°±0.1° / ±0.25° Diameter 50.8mm ± 0.1mm / 76.2mm ± 0.25mm / 100.0 ± 0.40mm / 125.0 ± 0.3mm / 150.0 ± 0.3mm Thickness 330um ± 15um/430um ± 10um/500um ± 10um Major Flat A-axis (1 1-2 0) ± 0.2° Major Flat Length 16.0mm ± 1.0mm / 22.0mm ± 1.0mm / 32.5 ± 1.0mm / 47.5 ± 2.5mm Minor None Front Surface Finish Epi-ready polished, Ra< 0.2nm Back Surface SSP: Fine ground, Ra 0.4 to 1.0 um; DSP: Polished. Edge condition Edge defects not to exceed SEMI M3-91, TTV <15um/<10um/<10um BOW <15um/<10um/<10um Warp <15um/<10um/<10um Bubble & Color None by visual inspection in intensive light Ground Boundary None by visual inspection in fluorescent light Cleanliness Free visible contamination Packaging Packaged in a class 100 clean room environment, in cassettes of 25pcs or single fluroware, under a nitrogen atmosphere. Note R-plane (1-1 0 2), A-plane (1 1-2 0 ), and M-plane(1-1 0 0) are available; Customer's specification not listed above is also available upon request.