RF Power Mosfet BLF278

RF Power Mosfet BLF278

original price: 10,00 USD
Shenzhen, China
Production capacity:
10000 Piece / Day
Shenzhen, China
Company
86-755-83505482
YOLANDA KE
Contact person

Basic Information

Brand Name NXP
Model Number RF Power MosfetBLF278
FEATURES · High power gain · Easy power control · Good thermal stability · Gold metallization ensures excellent reliability. APPLICATIONS · Broadcast tnsmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. MODE OF OPERATION f (MHz) VDS (V) PL (W) Gp (dB) hD (%) CW, class-B 108 50 300 >20 >60 CW, class-C 108 50 300 typ. 18 typ. 80 CW, class-AB 225 50 250 >14 typ. 16 >50 typ. 55

Delivery terms and packaging

Port: SHENZHEN

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