High-Speed Switching Diode ON MMBT3906LT1G

General Purpose Transistor PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −40 Vdc Collector−Base Voltage VCBO −40 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance Junction to Ambient R JA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance Junction−to−Ambient R JA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.