High-speed switching diode 1N4148

High-speed switching diode 1N4148 FEATURES •Hermetically sealed leaded glass SOD27 (DO-35) package •High switching speed: max. 4 ns •General application •Continuous reverse voltage: max. 100 V •Repetitive peak reverse voltage: max. 100 V •Repetitive peak forward current: max. 450 mA. High-speed diodes SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF continuous forward current see Fig.2; note 1 − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 μs t = 1 ms t = 1 s − − − 4 1 0.5 A A A Ptot total power dissipation Tamb = 25 °C; note 1 − 500 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. .SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVF forward voltage see Fig.3 1N4148 IF = 10 mA − 1 V IR reverse current VR = 20 V; see Fig.5 25 nA VR = 20 V; Tj = 150 °C; see Fig.5 − 50 μA Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.6 − 4 pF trr reverse recovery time when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns Vfr forward recovery voltage when switched from IF = 50 mA; tr = 20 ns; see Fig.8 − 2.5 V