Cr:YAG Q-switch

Cr:YAG Q-switch

Shanghai, China
Shanghai, China
Company
00086-21-39523288
Alex Ge
Contact person

Basic Information

The preliminary experiments of Cr:YAG showed that the pulse width of passively Q-switched lasers could be as short as 9 ns for diode pumped Nd:YAG lasers and repetition as high as 10kHz for diode pumped Nd:YVO4 lasers. Furthermore, an efficient green output @ 532 nm, and UV output @ 355 nm and 266 nm were generated, after a subsequent intracavity SHG in KTP or LBO, THG and 4HG in LBO and BBO for diode pumped and passive Q-switched Nd:YAG and Nd:YVO4 lasers. Specifications: Orientation: <100> crystalline direction Wavefront distortion: l/8 per inch @ 633 nm Surface quality: 10/5 Scratch / Digper MIL-O-1380A Parallelism: < 10 arc seconds Perpendicularity: < 5 arc minutes Clear Aperture: >90% Transmission Tolerance: ±3%Flatness: <l/10 @ 633 nm Anti-Reflection Coating: R < 0.20% @ 1064 nm per surface.

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