5N60 MOSFET Transistor

5N60,MOSFET Transistor: 1,Part Number:CSP5N60M; 2,Drain to Source Voltage(VDSS):600V;N-Channel MOSFET; 3,Static Drain-Source On-state Resistance(RDS(ON) ):2.5 ohm; 4,Continuous Drain Current(@TC = 25°C)(ID):4.1 A 5,Package:TO-220;Tube packing;Green Product and No Pb; 6,Certification:RoHS Compliants,ISO9001:2008,SGS Report etc.. 7,Features: High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 19nC) Improved dv/dt Capability 100% Avalanche Tested 8,General Description : This N-channel enhancement mode field-effect power transistor using CSI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 package is well suited for adaptor power unit and power inverter application.