Polykristallinen Siliziumwafer 156mm

Multi-crystalline silicon wafer: Item Characteristics Conductivity Type P-Type Shape Square Resistivity 0.5-3Ω·cm Dimension 156mm×156mm±0.5mm Diagonal 219.2mm±0.5mm Thickness 180μm±20μm Oxygen Concentration ≤1×1018 atoms/cm3 Carbon Concentration ≤4.5×1017atoms/cm3 Dopant Boron Total Thickness Variation ≤25μm Bow ≤50μm Chips Size≤1mm×1mm allowed Saw Mark ≤20μm Appearance Quality V-type edge indents, cracks, breakage and holes are not permitted. Surface should be clean and without spots.