Oxid-gebundenen SiC-Platte

The detailed physical-chemical index is on the following:Chemical AnalysisSic > 93 %Physical PropertiesBulk Density 2.72-2.76 g/cm3Apparent Porosity 8-10 %Cold Crushing Strength 1500 kg/cm2Linear Thermal Expansion at 1000 °C 0.4-0.45 %Thermal Conductivity at 1000°C 13.8 Kcal/m.hr.°CModulus of Rupture at 1400°C 600 kg/cm2About ProductThe Sic Plate is oxide-bonded silicon carbide product based on black silicon carbide materials and clay. This product presents its excellent characteristic due to the new formula imported from Japan and can therefore successfully be used in all kinds of ceramic kilns.The high-grade silicon carbide plate produced by our company has excellent performances as follows:It’s very strong in oxidation resistance, applied to ceramic firing in oxidizing and reducing atmosphere. In normal operating and firing circumstances, the turnover rate is up to 600-1200 times or more.It has high bending and compression strength under high temperature, used with single face for a long term, need not exchange face and not easy to be out of shape.It’s good in thermal shock stability, not easy to crack when operating.It has high volume density with smooth surface and no dregs falling when operating.It has wide temperature scope, able to operate within the scope of 700-1450°C for a long term.The product is thinner and stronger enough to improve the operating factor of kiln space and then reduce the consumption of energy in maximum limit, so as to save production cost for customer.