Halbleiter-GaAs

High purity arsenic is mainly used to produce Compound Semiconductor-GaAs, the doped elements of Silicon single-crystal and Germanium single-crystal. These materials are widely used in the fields of Information, Communication, Photoelectron, Large-Scale Integrated Circuits, HD Highlight Large-Screen Display, Remote Sensing, Exploring, Far Infrared and Solar Cell, etc. It has bright prospects. There are 2 forms of package for the products, argon-filled glass bottle package (1500g/bottle and 3000g/bottle), and glass test tube package, which is available by client's requests. Impurity Content≤ unit10-7% B Na Mg Al K Ca Cr Fe Ni Cu Zn Se Ag Sb Pb Bi 5NAs 500 200 500 500 500 500 500 100 500 500 1000 500 500 500 6NAs 40 20 20 20 40 20 40 15 10 20 20 20 10 20 7NAs 10 10 5 5 10 10 5 10 5 2 5 5 5 5 5 5