Ort der Herkunft |
Jiangsu China (Mainland) |
Marke |
NewZhongxu |
Modell-Nummer |
CSMB-04B |
CSMB-04 recognition semiconductor magnetic sensor is HMS magneto-dependent sensor with high sensitivity, which is also called magnetic head. It is composed of semiconductor material indium stibnide(InSb) magnetic resistence chip and permanent magnet supplying the InSb magnetic resistence chip bias. N pieces single, 10mm width magnetic resistence chips line spread, and the detection witdh is nch*10mm. It can readout wide breadth, large quantities magnetic signals. CSMB series of products apply hard metal as its outer covering, so the anti-interference ability is very strong. Magnetic sensors, with excellent assembly tachnique, have extremely high cost performance. FEATURE 1. High stability, SN good. 2. Non-contact detection, output stability, fast response. 3. Output voltage is irrelevant to the magnet's moving speed. 4. The seizure of the resistance is pure, strong anti-interference capability. 5. Chips line spread. Every channel responds simultaneously. 6. Wide detection width, low noise. APPLICATION 1. Dynamic Money Detector 2. Static Money Detector 3. Detection of Weak magnetic ink 4. Detection of RMB and Foreign currency 5. Detect the magnetic signal of bank notes 6. Detection of Magcard and Bar magnet Note1. Sensitivity: Amplify electric current with 1100 times, when magnetic head scanning surface aims at the tinsel (0.1mm) with 100mA, 50Hz A. C. And slide linearly with it slowly, then measure the peak-to-peak value of the output voltage with oscilloscope and the maximum value is sesitivity. Note 2. Symmetry = |MR1-MR2|/ MR1 (or MR2). Note3. N is the quantity of output channels Note4. Some details of product models can be obtained in another way. Pramater: Subject Symbol Value Unit Voltage Vamax 5.5 V Resistance Rinsmin 5 M Ω Operating temperature To -20 +60 ºC Storage temperature Ts -20 +70 ºC Subject Symbol Value Unit Min Type Max sensitivity 1 S 900 1500 - mVp-p Symmetry 2 d - 10 30 % Resistance R 0.1 - 2 K Ω Total resistance R 0.2 - 4 K Ω Noise Vo - - 300 uVp-p Effective detection width W - 4ch*10 - mm Magnctic flux density B - 0.12 - T Resolution T - 0.75 - mm