Diodes Guilin Strong Micro Electronics (GSME) Co., Ltd.,has been specializing in producing and marketing semiconductors including small signal transistor, p
Thyristor Guilin Strong Micro Electronics (GSME) Co., Ltd.,has been specializing in producing and marketing semiconductors including small signal transistor, p
Leistungs-MOSFETs Guilin Strong Micro Electronics (GSME) Co., Ltd.,has been specializing in producing and marketing semiconductors including small signal transistor, p
SMD-Transistoren Guilin Strong Micro Electronics (GSME) Co., Ltd.,has been specializing in producing and marketing semiconductors including small signal transistor, p
DIP Dioden Guilin Strong Micro Electronics (GSME) Co., Ltd.,has been specializing in producing and marketing semiconductors including small signal transistor, p
DIP-Transistor (TO-92, TO-126, TO-220) Guilin Strong Micro Electronics (GSME) Co., Ltd.,has been specializing in producing and marketing semiconductors including small signal transistor, p
Brückengleichrichter MBS-Serie Bridge Rectifier MBS Series Type NumberIF(AV) VRRM VF Package AB10S 0.8 1000 1.0 MBS AB8S 0.8 800 1.0 MBS AB6S 0.8 600 1.0 MBS AB4S
MBR10100 Schottky Diode TO-220 MaximumRatings(TC=25unlessotherwisenoted) Parameter Symbol MBR10100 Unit Maximumrepetitivepeakreversevoltage VRRM 100 V Workingpeakreversevoltage VRW
2N60 TO-220F-MOSFET 2N60F EFT:VDSS=600V ID=2A,N channel MOS,BVDSS=650V typically @ Tj=150 DESCRIPTION: The GSME 2N60FP is a N-channel enhancement-mode MOSFET, providing
SMD-Transistor SMD Transistor are designed for use in various fields including: mobile communications, PCs, consumption electronic products, household equipments, a
Laserdiodenmodul und Laser diode Wavelenght:405 - 980nm Power: 5mW - 2W Package: To3 To5 To18 etc. Laser diode modul wavelenght(nm) power(mW) 405 5 10 532 5 10 50 635 5 1
0603 1Chip weißen Chip SMD LED Descriptions: The0603 1chip SMD LED series is available in soft orange,red, yellow, blue, green, white, etc.Utilizing advanced InGaN chip technology.
PLCC2 Serie 3528 Typ 1Chip weiß TOP SMD LED Descriptions: The PLCC2 series3528 1chip SMD LED series is available in soft orange,red, yellow, blue, green, white, etc.Utilizing advanced InGaN chi
PLCC6 Serie 5050 Typ 3Chip weiß TOP SMD LED Descriptions: The PLCC6 series 5050 3chip SMD LED series is available in soft orange,red, yellow, blue, green, white, etc.Utilizing advanced InGaN ch
1 Watt Power LED weiß 70-120Lm 1Watt High Power LED series emitters are one of the highest flux LEDs in the world by Lenstar. Features: Longer Life SpanHighest FluxLow voltage DC o
15 Watt weißen High Power LED High Power LED series emitters are one of the highest flux LEDs in the world by Lenstar. Features: Longer Life SpanHighest FluxLow voltage DC operate
Triac BT151 elektronische Teile professionally manufactured ISO9001:2000, UL, ROHS reliable capacity thyristor power regulato
Triac BT136 Thyristor professionally manufactured reliable capacity ISO9001:2000, UL, ROH
Triac BT131 TO-220 elektronische Komponente TO-220 BT131 thyristorChip dimension:1.3×1.3mm2Chip thickness: 220±5μmPackage Form: TO-220AB or on requestMaximum ratings Ta=25 CName
elektronische Komponente Fänger we are one of the most professional arrestor suppliers in China.transistor mosfet 100% guaranteed quality competitive price SA series: SA230/260/380/
Transistor 2SD880 NO.modelpolarityPtotIcVcboVceoVeboHFEVce(sat) (V)packageIcVceMinIcIbMax(W)(A)(V)(V)(V)(A)(V)(A)(A)12SD880NPN3031006080.557030.30.8TO-22
HP3500 Entladungsröhre Fänger diode modelbreakdown voltagebeadover voltageon-state voltagehold currentcapacityVbrIrVboIrmVtItIhC 50V/MHZminminmaxminmaxminminmaxVm AVm AVAm Ap FHP3
Triac BT137 Thyristor professionally transistor manufactured reliable capacity ISO9001:2000, UL, ROHS resistors transistor
Schalttransistor BU406 ABSOLUTE MAXIMUM RATINGS:SymbolParameterValueUnitVCBOcollector-base voltage(IE=0)400VMINVCEOcollector-emitter voltage(IB=0)200VMINVEBOemitter-base vo
Triac BT151 elektronische Komponente BT151 ThyristorChip dimension:2.50×2.50mm2Chip thickness: 220±5μmPackage Form: TO-220Maximum ratingsTj=25CNameSymbolRatingUnitOff-sta
Super Fast Recovery Rectifier Diode SUPER FAST RECOVERY RECTIFIER DIODE SymbolsES2AES2BES2CES2DES2GES2JUnitsMaximum repetitive peak reverse voltageVRRM50100150200400600VoltsMaximum RMS
Fast Recovery Gleichrichterdiode FAST RECOVERY RECTIFIER DIODESymbolsRS1ARS1BRS1DRS1GRS1JRS1KRS1MUnitsMaximum repetitive peak reverse voltageVRRM501002004006008001000VoltsMaximum RMS
Super Fast Recovery Rectifier Diode SUPER FAST RECOVERY RECTIFIER DIODESymbolsES1AES1BES1CES1DES1GES1JUnitsMaximum repetitive peak reverse voltageVRRM50100150200400600VoltsMaximum RMS v
Schottky-Diode SymbolsSS12SS13SS14SS15SS16SS18SS19SS110UnitsMaximum repetitive peak reverse voltageVRRM20304050608090100VoltsMaximum RMS voltageVRMS1421283542566270
Schottky Barrier Gleichrichterdiode SCHOTTKY BARRIER RECTIRFIER DIODESymbolsMBR1020CTMBR1040CTMBR1050CTMBR1060CTMBR1080CTMBR10100CTUnitsMaximum repetitive peak reverse voltageVRRM204050
Schottky Barrier Gleichrichterdiode MBR30100CT SCHOTTKY BARRIER RECTIRFIER DIODESymbolsMBR3020CTMBR3040CTMBR3050CTMBR3060CTMBR3080CTMBR30100CTUnitsMaximum repetitive peak reverse voltageVRRM204050
Schottky Barrier Gleichrichterdiode SCHOTTKY BARRIER RECTIRFIER DIODESymbolsMBR1520CTMBR1540CTMBR1545CTMBR1560CTMBR1580CTMBR15100CTUnitsMaximum repetitive peak reverse voltageVRRM204045
Super Fast Recovery Rectifier Diode SUPER FAST RECOVERY RECTIRFIER DIODESymbolsMBR1605MBR1610MBR1620MBR1630MBR1640MBR1660CTUnitsMaximum repetitive peak reverse voltageVRRM50100200300400
Super Fast Recovery Rectifier Diode It can be instead of NIHON INTER's FSU10A60.SFF10-06 ( RRD/10A/600V /VF<1.8V@10A/ TRR<45NS ITO-220AC TYPE
Schottky-Diode SCHOTTKY BARRIER DIODE RECTIFIERSymbolsSS22SS23SS24SS25SS26SS28SS29SS210UnitsMaximum repetitive peak reverse voltageVRRM20304050608090100VoltsMaximum
FRD Diode 20F40HF MAIN CHARACTERISTICS IF(AV) 20A VRRM 400 V Tj(max) 175°C VF(typ) 1.35 V trr(typ) 25ns APPLICATIONS l Switch power supply l PDP l General
3DD4243D Transistor MAIN CHARACTERISTICSIC 2.0A VCEO 400V PC(TO-92) 1W PC(TO-251) 10W PC(TO-126) 20W PC(TO-220) 40W APPLICATIONS Electronic ballasts High frequency swi
3DD13003A Transistor MAIN CHARACTERISTICSIc =1.5A; VCED=450V; PC(TO-92) 1W; PC(TO-126) 20W; PC(TO-220) 40W APPLICATIONS Battery changer Electronic ballasts High frequency
Feldeffekttransistor MAIN CHARACTERISTICS ID=7.0A VDSS=650V Rdso(@Vgs=10V)=1.35ohm Qg=54 nCAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballast
Leistungstransistor für Energiesparlampen Ic(A) 0.5 Pc(W) 1 BVcbo(V) 600 BVceo(V) 400 hfe 10 40 Package TO-92 Status active Appilication: Energy-Saving Lights ; Electronic Ballasts for Ener
Leistungstransistor für Energiesparlampen Ic(A) 1.2 Pc(W) 1 BVcbo(V) 700 BVceo(V) 400 hfe 10 40 Package TO-92 Statusnew Appilication: Energy-Saving Lights ; Electronic Ballasts for Energy-Sa
Leistungstransistor für Energiesparlampen Ic(A) 1.2 Pc(W) 1 BVcbo(V) 700 BVceo(V) 400 hfe 10 40 Package TO-92 Statusactive Appilication: Energy-Saving Lights ; Electronic Ballasts for Energy
Leistungstransistor für Energiesparlampen Ic(A) 1.2 Pc(W) 10 BVcbo(V) 700 BVceo(V) 400 hfe 10 40 Package TO-251 Statusactive Appilication: Energy-Saving Lights ; Electronic Ballasts for Ener
Leistungstransistor für Energiesparlampen Ic(A) 1.2 Pc(W) 20 BVcbo(V) 700 BVceo(V) 400 hfe 10 40 Package TO-126 Statusactive Appilication: Energy-Saving Lights ; Electronic Ballasts for Energ
Leistungstransistor für Energiesparlampen Ic(A) 1.5 Pc(W) 1 BVcbo(V) 700 BVceo(V) 400 hfe 10 40 Package TO-92 Statusnew Appilication: Energy-Saving Lights ; Electronic Ballasts for Energy-Sav
Leistungstransistor für Energiesparlampen Ic(A) 1.5 Pc(W) 10 BVcbo(V) 700 BVceo(V) 400 hfe 10 40 Package TO-251 Statusnew Appilication: Energy-Saving Lights ; Electronic Ballasts for Energy-S
Leistungstransistor für Energiesparlampen Ic(A) 1.5 Pc(W) 20 BVcbo(V) 700 BVceo(V) 400 hfe 10 40 Package TO-126 Statusnew Appilication: Energy-Saving Lights ; Electronic Ballasts for Energy-S
Leistungstransistor für Energiesparlampen Ic(A) 1.5 Pc(W) 1 BVcbo(V) 700 BVceo(V) 400 hfe 10 40 Package TO-92 Statusnew Appilication: Energy-Saving Lights ; Electronic Ballasts for Energy-Sav
Leistungstransistor für Energiesparlampen Ic(A) 1.5 Pc(W) 10 BVcbo(V) 700 BVceo(V) 400 hfe 10 40 Package TO-252 Statusactive Appilication: Energy-Saving Lights ; Electronic Ballasts for Energ
Leistungstransistor für Energiesparlampen Ic(A) 1.5 Pc(W) 10 BVcbo(V) 700 BVceo(V) 400 hfe 10 40 Package TO-251 Statusactive Appilication: Energy-Saving Lights ; Electronic Ballasts for Energ