MODULE
MODULE
DIODE
TRANSISTOR
THYRISTOR Features: . All Diffused Structure . Spoke Amplifying Gate Configuration . High dV/dt Capability . Pressure Assembled Devic
TRANSISTOR
DIODE
RECTIFIER
TRANSISTOR
1W 110 bis 120lm Lichtstrom der Leistungs-LED 350 mA 1W High Power LED with 110 to 120lm Luminous Flux, 350mA Forward Current,3.0 to 3.6V Forward Voltage Model :SP1W120 Suitable for re-flow soldering
3W High Power LED mit 150 bis 180lm Lichtstrom, High Power LED 3W Warm White 150-180LM 750mA Model No.: SP3W180 Description : Power dissipation :3W ,750mA test forward current Color Temperature :2
Bipolar Transistor SBR13003B3, TS13003,13003 General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode p
Bipolar Transistor SBN13001,13001
Fast Recovery Diode General Description Winsemi's WSAD92-02 series are the state of the Ultra fast recovery rectifiers specifically designed with optimized voltage drop
Schottky-Diode General Description Dual center tap Schottky rectifers suited for high frequency switch power supply and free wheelig diodes, polarity protection app
Leistungs-MOSFET WFP60N03L, FQD60N03L, IRF3703,3703
Silicon Steuergleichrichter-Dioden MCR100-8 Symbol Parameter Value Units Vdrm/Vrrm Repetitive peak off-state voltage 600 V It(rms) RMS on-state current(180°conduction angels) Tl=85°C 0.
Bidirektionale Triodenthyristor TRIAC STK1A60 Features Repetitive Peak off-State Voltage: 600V R.M.S On-State Current(IT(RMS)=1A Low on-state voltage: VTM=1.2(typ.)@ ITM Low reverse and forwar
Gleichrichter, Triac WTPB4A60 kontrollierten Wieder
Power MOSFET SFD60N03L, FQD60N03L, IRF3703,3703 General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been esp
IC WIY2263 1. Burst Mode function 2.Low startup current(4uA) 3.Low operating current (1.4mA) 4.Built-edge blanking 5.Build-in synchronized slope cp,pensation 6.
IC WIS2269N8 1. Burst Mode function 2.Low startup current(6.5uA) 3.Low operating current (2.3mA) 4.Built-edge blanking 5.Build-in synchronized slope cp,pensation
Silicon Steuergleichrichter-Dioden SCR4C60S Symbol Parameter Value Units Vdrm/Vrrm Repetitive peak off-state voltage 600 V It(rms) RMS on-state current(180°conduction angels) Tl=60°C Ta
Schottky-Diode WSP20D65 General Description Dual center tap Schottky rectifiers suited for high frequency switch power supply and free wheeling diodes, polarity protection a
MOSFET SFP50N06 Features This Power MOSFET is produced using Winsemi's trench Layout-based process.This technology proves the performances compared with standard par
Bidirektionale Triodenthyristor TRIAC STN1A60, 1A6
S3A THRU S3M Oberflächenmontage General Purpose Rectifi FEATURES Glass passivated chip For surface mounted applications Low reverse leakage current Low forward voltage drop High current capability Plastic
SM4001 SM4007 THRU Glas passivierte Oberflächenmontage FEATURES · For surface mounted applications · Glass passivated chip junction · Low leakage current · Plastic package has
S2A THRU S2M Oberflächenmontage General Purpose Rectifi FEATURES Glass passivated chip For surface mounted applications Low reverse leakage current Low forward voltage drop High current capability Plastic
Zener Diode BZX55C Series Parameter Value Units Storage Temperature Range -65 to +200 °C Maximum Junction Operating Temperature + 200 °C Lead Temperature (1/16 from
MBS GLEICHRICHTER Features · Surface Mount Package · Glass Passivated Diode Construction · Moisture Resistant Epoxy Case · High Surge Curre
DB101S THRU DB107S FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop,high current capability Reliable low cost construction utilizin
GS1A THRU GS1M Oberflächenmontage General Purpose Recti Features · For Surface Mount Applications · Extremely Low Thermal Resistance · Easy Pick And Place · High Temp Soldering:
S1A THRU S1M Oberflächenmontage General Purpose Rectifi FEATURES Glass passivated chip For surface mounted applications Low reverse leakage current Low forward voltage drop High current capability Plastic
1W Zener Diode DL4728A THRU DL4761A Features 1. High reliability 2. Very sharp reverse characteristic 3. Low reverse current level 4. VZ-tolerance± 5% Applications Voltage stabil
FR301 FR307 THRU 3,0 Amp Fast Recovery Gleichrichter FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop High current capability T
IC-Chip MSM6260 Packaging Detail:anti-static bags with foam boxsDelivery Detail3-5daysPayment;T/T,western union
QSC6270 FÜR QUALCOMM Chip Packaging Detail:anti-static bags with foam boxsDelivery Detail3-5daysPayment;T/T,western union
IC-Chip MSM7225 FÜR QUALCOMM Packaging Detail:anti-static bags with foam boxsDelivery Detail3-5daysPayment;T/T,western union
SMD Gleichrichterdiode DO-214AC Details of ProductsPlace of Origin: SHENZHEN,GUANGDONG,CHINABrand Name:HKTModel Number: HKT-DO214AC,SODType:Rectifier DiodesPackage Type: DO-214ACMar
SMD-Transistor HKT offer not only good products but also continous improvement on quality and service, we are looking forward to growing up with worldwide customer
Thyristor BT134 Values(If there isn't any other condition provide,Tamb=25°c) Symbol Test ConditionsValueIt(rms)Sine-wave full-wave2A VdrmnoMax 600VVrrmnoMax 600V
Spannungsregler 7805 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI35VVO5VIO1.5APD2WTopr0 125°cTstg-65 150°c Main funct
13003A5 Transistor TO-126 Characteristics 1)Low switching loss 2)High reliability 3)Great current characteristic 4)Small reverse leak current 5)Great high degree characteristi
Leistungstransistor D882 Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolValueVCBO40VVCEO30VVEBO5VIC3.0APtot(Ta=25°c)1.0WPtot(Tc=25°c
Transistor 13005 TO-220 Characteristics 1)Low switching loss 2)High reliability 3)Great current characteristic 4)Small reverse leak current 5)Great high degree characteristi
Leistungstransistor TIP42C Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolValueVCBOTIP42: -40V TIP42C:-100V VCEO TIP42: -40VTIP42C:-100V VEBO-
Spannungsregler 78M05 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI25VVO5VIO0.5APD1.25WTopr0 125°cTstg-65 150°c Main fu
Spannungsregler 78L05 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI30VVO5VIO0.1APD0.625WTopr0 125°cTstg-65 150°
Thyristor TO410 Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolTest Conditions and ValueIT(RMS)(Tc=60°c,Square-wave,breakover a
