钻洞AlN陶瓷基底

PropertyIndexofAluminumNitrideSubstrates Propertycontent PropertyIndex Thermalconductivity(W/m·k) ≥170Volumeresistivity(Ω·cm)>1013 Dielectricconstant[1MHz,25°C] 9Dielectricloss[1MHz,25°C]3.8*10-4Dielectricstrength(KV/mm) 17Density(g/cm3) ≥3.30SurfaceroughnessRa(µm) 0.3 0.5Thermalexpansivity[20°Cto300°C](10-6/°C) 4.6Flexuralstrength(MPa) 320 330Modulusofelasticity(GPa) 310 320Moh’shardness 8Waterabsorption(%) 0Camber( /25(length)) 0.03 0.05Meltingpoint(°C) 2500Appearance/color DarkGray Drill hole AlN ceramic substratehashighthermalconductivityofmorethan170W/m.k,high density,lowdielectricloss,goodinsulationandsomeotherexcellentproperties.TheALNsubstrate isthebestchoiceforawiderangeofindustrialinsulatingheatsinkmaterialofhighpowermachinery andequipmentssuchashighfrequencyequipmentsubstrate,highpowertransistormodulesubstrate, highdensityhybridcircuits,microwavepowerdevices,powersemiconductordevices,powerelectronic devices,optoelectroniccomponents,laser-semi-conductor,LED,ICproducts,andsoon. Surfaceroughnesscanbereachedwithin0.1µmafterbeingpolished.Sizetolerancecanbecontrolled ataround±0.1mmbylasermachine. Differentdimensionandthicknessareavailablevialasercutorcustomize.