基本信息
| 出生地 | Fujian China (Mainland) |
|---|---|
| 牌子的名字 | TEM |
| 模式的数量 | HQ-008 |
PropertyIndexofAluminumNitrideSubstrate Propertycontent PropertyIndex Thermalconductivity(W/m·k) ≥170Volumeresistivity(Ω·cm) >1013Dielectricconstant[1MHz,25°C] 9Dielectricloss[1MHz,25°C] 3.8*10-4Dielectricstrength(KV/mm) 17Density(g/cm3) ≥3.30SurfaceroughnessRa(µm) 0.3 0.5Thermalexpansivity[20°Cto300°C](10-6/°C) 4.6Flexuralstrength(MPa) 320 330Modulusofelasticity(GPa) 310 320Moh’shardness 8Waterabsorption(%) 0Camber( /25(length)) 0.03 0.05Meltingpoint(°C) 2500Appearance/color DarkGrayAluminumnitrideceramicsubstratehashighthermalconductivityofmorethan170W/m.k, highdensity,lowdielectricloss,goodinsulationandsomeotherexcellentproperties.TheALN substrateisthebestchoiceforawiderangeofindustrialinsulatingheatsinkmaterialofhigh powermachineryandequipmentssuchashighfrequencyequipmentsubstrate,highpowertransistor modulesubstrate,highdensityhybridcircuits,microwavepowerdevices,powersemiconductordevices, powerelectronicdevices,optoelectroniccomponents,lasersemiconductor,LED,ICproducts,andsoon. Surfaceroughnesscanbereachedwithin0.1µmafterbeingpolished.Sizetolerancecanbecontrolled ataround±0.1mmbylasermachine. Differentshapeanddiameterproductsareavailablevialasercutting orcustomize.
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Packaging Detail: cartons and boxes Delivery Detail: within a week after receipt of your remittance
端口: Quanzhou
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