RF Power Mosfet BLF278

FEATURES · High power gain · Easy power control · Good thermal stability · Gold metallization ensures excellent reliability. APPLICATIONS · Broadcast tnsmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. MODE OF OPERATION f (MHz) VDS (V) PL (W) Gp (dB) hD (%) CW, class-B 108 50 300 >20 >60 CW, class-C 108 50 300 typ. 18 typ. 80 CW, class-AB 225 50 250 >14 typ. 16 >50 typ. 55