RF MOSFET Amplifier Power ModuleRA33H1516M1

RF MOSFET Amplifier Power ModuleRA33H1516M1

中国上海, 中国
中国上海, 中国
公司
86-21-56327415
Sunny Su
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基本信息

出生地 Japan
牌子的名字 MITSUBISHI
模式的数量 RA33H1516M1
The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power anddrain current increase as the gate voltage increases. With a gatevoltage around 3.0V (minimum), output power and drain currenincreases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation. • Enhancement-Mode MOSFET Transistors (@ VDD=12.5V, VGG=0V) • Pout>33W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=10mW • Broadband Frequency Range: 154-162MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 46 x 12 x 6.3 mm Welcome to enter into business relationships with us, and we'll try our best for you!

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