RF MOSFET amplifier power module RA07H3340M

The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES Enhancement-Mode MOSFET Transistors ( @ VDD=12.5V, VGG=0V) Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW hT>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW Broadband Frequency Range: 330-400MHz Low-Power Control Current IGG=1mA (typ) at VGG=3.5V Module Size: 30 x 10 x 5.4 mm Welcome to enter into business relationships with us, and we'll try our best for you!