NPN Epitaxial Planar Silicon Transistor 2SC3807M

Applications • Low-frequency general-purpose amplifiers, drivers. Features • Large current capacity (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=1000 to 2000). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High VEBO(VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 25 V Emitter-to-Base Voltage VEBO 17 V Collector Current IC 2 A Collector Current (Pulse) ICP 4 A Collector Dissipation PC 1.1 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Ordering number : ENA0629 42507LA TI Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=20V, IE=0A 0.1 μA Emitter Cutoff Current IEBO VEB=10V, IC=0A 0.1 μA DC Current Gain hFE1 VCE=5V, IC=500mA 1000 2000 hFE2 VCE=5V, IC=1A 600 Gain-Bandwidth Product fT VCE=10V, IC=50mA 260 MHz Output Capacitance Cob VCB=10V, f=1MHz 24 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=1A, IB=20mA 0.135 0.5 V Base-to-Emitter Saturation Voltage VBE(sat) IC=1A, IB=20mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 30 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 25 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 17 V Turn-ON Time ton See specified Test Circuit. 0.14 μs Storage Time tstg See specified Test Circuit. 0.8 μs Fall Time tf See specified Test Circuit. 0.1 μs