密度AlN陶瓷盘heatsink

PropertyIndexofAluminumNitrideDisk Propertycontent PropertyIndex Thermalconductivity(W/m·k) ≥170Volumeresistivity(Ω·cm)>1013Dielectricconstant[1MHz,25°C] 9Dielectricloss[1MHz,25°C]3.8*10-4Dielectricstrength(KV/mm) 17Density(g/mm3) ≥3.30SurfaceroughnessRa(µm) 0.3 0.5Thermalexpansivity[20°Cto300°C](10-6/°C) 4.6Flexuralstrength(MPa) 320 330Modulusofelasticity(GPa) 310 320Moh’shardness 8Waterabsorption(%) 0Camber( /25(length)) 0.03 0.05Meltingpoint(°C) 2500Appearance/color DarkGray Thealuminum nitride ceramic disk heatsinkhashighthermalconductivityofmorethan 170W/m.k,highdensity,lowdielectricloss,goodinsulationandsomeotherexcellentproperties. TheALNdiskisthebestchoiceforawiderangeofindustrialinsulatingheatsinkmaterialofhigh powermachineryandequipmentssuchashighfrequencyequipmentsubstrate,highpower transistormodulesubstrate,highdensityhybridcircuits,microwavepowerdevices,power semiconductordevices,powerelectronicdevices,optoelectroniccomponents,lasersemiconductor, LED,ICproducts,andsoon. Surfaceroughnesscanbereachedwithin0.1µmafterbeingpolished.Sizetolerancecanbecontrolled ataround±0.1mmbylasermachine. Differentshapeanddiameterproductsareavailablevialasercuttingorcustomize.