Features: 1) All-diffused structure 2) Interdigitated amplifying gate configuration 3) VTM<1.9V at 25°C, 2,000A 4) High DV/DT capability; blocking capability up to 1400V 5) For inverter and chopper applicationsSpecifications at 125°C: 1) Tq = 25us 2) VTM≤1.9V at 25oC, 2,000A 3) VRRM/VDRM : 1000-1400V