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SMD rectifier diode DO-214AC Details of ProductsPlace of Origin: SHENZHEN,GUANGDONG,CHINABrand Name:HKTModel Number: HKT-DO214AC,SODType:Rectifier DiodesPackage Type: DO-214ACMar
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thyristor BT134 Values(If there isn't any other condition provide,Tamb=25°c) Symbol Test ConditionsValueIt(rms)Sine-wave full-wave2A VdrmnoMax 600VVrrmnoMax 600V
voltage regulator 7805 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI35VVO5VIO1.5APD2WTopr0 125°cTstg-65 150°c Main funct
transistor 13003A5 TO-126 Characteristics 1)Low switching loss 2)High reliability 3)Great current characteristic 4)Small reverse leak current 5)Great high degree characteristi
power transistor D882 Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolValueVCBO40VVCEO30VVEBO5VIC3.0APtot(Ta=25°c)1.0WPtot(Tc=25°c
transistor 13005 TO-220 Characteristics 1)Low switching loss 2)High reliability 3)Great current characteristic 4)Small reverse leak current 5)Great high degree characteristi
power transistor TIP42C Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolValueVCBOTIP42: -40V TIP42C:-100V VCEO TIP42: -40VTIP42C:-100V VEBO-
voltage regulator 78M05 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI25VVO5VIO0.5APD1.25WTopr0 125°cTstg-65 150°c Main fu
voltage regulator 78L05 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI30VVO5VIO0.1APD0.625WTopr0 125°cTstg-65 150°
thyristor TO410 Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolTest Conditions and ValueIT(RMS)(Tc=60°c,Square-wave,breakover a
thyristor 2P4M TO-202 Parameter SymbolValue VRRMmax 400VVDRMmax 400VIT(AV)2AITSM20AI2T 0.4A2SPgm0.5WPg(av)0.1WIfgm0.2AVrgm6VTvj-40 110°cTstg-40 150°
Power Transistor 13001 power transistor--13001 1)PACKGAGE:TO-92 2)W:7 3)IC(A):0.3 4)Bvcbo(V):500 5)Bvceo(V):400 6)meet ROHS,SGS,ISO9001 certification 7)chip size:0.83*0.83
field effective transistor 13003T field effective transistor 13003T 1.PC(W):50 2.W:32 3.IC(A):2 4.Bvcbo(V):700 ,Bvceo(V):400 5.HFE:15-30 6.CHIP SIZE:1.84*1.84 7.high votage capabltlit
NPN power transistor 13005T NPN power transistor 13005T 1)PACKAGE:TO-220 2)PC(W):75 3)IC(A):5 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:15-30 7)Meet ROHS,SGS,ISO9001 8)chip size:2.52*
switching transistor 13007T Silicon Transistor 13007T 1)package:TO-220 2)PC(W):85 3)Bvcbo(V):700 4)Bvceo(V):400 5)HFE:15-35 6)CHIP SIZE:3.38*3.38 7)IC(A):8 Standard Series Trans
circuit electronic circuit electronic -----------Our company stands as a professional manufacturer of POWER TRANSISTORS located in Mainland China. Transistors 13003 Ser
energy saving lamp transistor IC Transistor 13003F5: Ic(A) 1.5 Bvcbo( V) 400 W: 20 HFE 15-30 Our company is a professional manufacturer of Power Transistors, located in Mainland
component transistors 13009T component transistors 13009T 1)PAKCAGE:TO-220 2)IC(A):12 3)PC(W):100 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:20-40 7)CHIP SIZE:4.08*4.08 Our company is a
general purpose transistors 13003F5 Detailed description of general purpose transistors 13003F5
power transistor manufacturer 13009T 13009T power transistor manufacturer 1)PC(W):100 2)W:105 3)IC(Q):12 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:20-40 7)CHIP SIZE:4.08*4.08 Our company is t
datasheet transistor 13003M4 datasheettransistor the detail description of transistor: 1)PC(W):45 2)IC(A):2 3)Bvcbo(V):700 4)Bvceo(V):400 5)HFE:15-30 6)CHIP SIZE:1.84 7)P
Electronic ballast transistor13001 Electronic ballast transistor---MJE13001 1)package:TO-92 2)W:9 3)IC(A):0.3 4)Bvcbo(V):500 5)Bvceo(V):400 6)COPPER FEET 7)meet ROHS,SGS,ISO9001 certif
Power transistor power transistor--------Transistor 13003TK : Chip Size 1.42 Ic(A)1.2 Bveco(V)400 Bvcbo(V)600 HFE15-30 W 22 Our company is a professional manufacturer
Darlington Transistor Darlington Transistor HuZhou YiFan Electronic CO., LTD is high-tech enterprise, which specializes in producing semiconductor devices, located in Zhe
fluorescent lamp transistor fluorescent lamptransistor 13005TS DETAIL: 1)package:TO-220 2)IC(A):4 3)Bvcbo(V):700 4)Bvceo(V):400 5)HFE:15-30 6)W:40 7)ROHS,SGS,ISO9000 8)COPPER F
power transistors power transistors 1. Standard Series Transistors (Voltage 400v) TO-92: 13001 13002 13001S 13003S TO-126: 13002 13003C6 13003F5 13003F6 13003S7 13003M
silicon transistor silicon transistor Our company is a professional manufacturer of Power Transistors, located in Mainlad China. Transistors 13003 Series and its cross
switch transistors the detail description of switch transistor 13003C6 1)PACKAGE:TO-126 2)IC(A):1 3)PC(W):25 4)Bvcbo(V):600 5)Bvceo(V):400 6)HFE:15-30 7)CHIP SIZE:1.30*
testing transistors13003F6 testing transistors13003F6 PCKAGE:TO-126 PC(W):35 IC(A): 1.5 BVcbo(V): 600 BVceo(V): 400 HFE:15-30 CHIP SIZE:1.63*1.6
power transistor 13009T power transistors13009T 1)PACKAGE:TO-220 2)PC(W)100 3)IC(A):12 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:20-40 7)ROHS,SGS,ISO9001 certification 8)CHIP SIZE
power transistor power transistor-----Our company is a professional manufacturer of Transistors, located in Mainland China. The main production is 13003 Series power
RF transistor RF 13003TF transistor RF transistor 1303TF features: 1.PC(W):40 2.IC(A:1.5 3.Bvcbo(V):600 Bvceo(V):400 4:HFE:15-30 Our production is 13003 Series Tra
Electronic Components Electronic Components Our company is a professional manufacturer of Transistors, located in Mainland China. The main production is 13003 Series Trans
Antistatic semiconductors 13003T Antistatic semiconductors 13003T 1)PACKGAGE:TO-220 2)W:32 3)IC(A):2 4)Bvcbo(V):700 5)Bvceo(V):400 6)meet ROHS,SGS,ISO9001 certification Our company
Triac 1. Standard Series Transistors (Voltage 400v) TO-92: 13001 13002 13001S 13003S TO-126: 13002 13003C6 13003F5 13003F6 13003S7 13003M4 TO-220: 13003TC
transistors D880
Transistor HuZhou YiFan Electronic CO., LTD is high-tech enterprise, which specializes in producing semiconductor devices, located in Zhejiang Mainland China.
transistors transistors Our company is a professional manufacturer of Transistors, located in Mainland China. The main production is 13003 Series Transistors whi
XSSY-L36BN IR LED XSSY-L36BN IR LED XSSY-L36BN IR LED is a wide viewing and extremely high output power illuminator assembled with a total of36 high efficiency AlGaAs
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Standalone Outdoor Sensor UN 08 DescriptionColorPackingCarton Size(cm)N.W./G.W.(kgs)1x20'ft (pcs)M.O.Q(pcs)Specification: Power Source: 100 130V/AC 220 240V/AC Power Frequency: 50 6
Microwave Sensor UN701 DescriptionColorPackingCarton SizeN.W./G.W.(kgs)1x20'ft (pcs)M.O.Q(pcs) Specifications Detection Range:360° Power Supply:100-130VAC 200-240VAC Po
High quality in4007 diode (ROHS) M1-M7 PACKAGE SMA(DO-214A) We offerfull range of STD,FR,UFR,HER,BR,TVS,SKY,SMD,DIACS rectifier diodes with competitive price and high quality: 1,Sili
R3000 High voltage rectifier diodes R3000 high voltage diodes 1.Brand:PFS 2.Material:100%copper 3.lead wire size:0.7*58mm 4.3000V 0.2A D0-41 FEATURESLow leakageHigh surge capability Hi
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