Features: 1) All-diffused structure 2) Amplifying gate configuration 3) VTM<1.25V at 125°C, 2,000A 4) High DV/DT capability; blocking capability up to 2000V 5) Pressure assembled device 6) For phase control applicationsSpecifications at 125°C: 1) VTM≤1.25V@ITM=2000A 2) DI/DT = 200A/us 3) VRRM/VDRM : 800-2000V