Features: 1) All-diffused structure 2) Amplifying gate configuration 3) VTM<1.45V at 12°C, 1,000A 4) High DV/DT capability; blocking capability up to 3300V 5) Pressure assembled device 6) For phase control applicationsSpecifications at 125°C: 1) VTM≤1.45V@ITM=1000A 2) DV/DT = 200V/us 3) VRRM/VDRM : 800-2000V