Features: 1) All-diffused structure 2) Amplifying gate configuration 3) VTM<1.65V at 25°C, 3,000A 4) High DV/DT capability; blocking capability up to 1600V 5) Pressure assembled device 6) For phase control applicationsSpecifications at 125°C: 1) VTM≤2.0V@ITM=3000A 2) DI/DT = 150A/us 3) VRRM/VDRM : 800-1400V