出生地 |
China |
模式的数量 |
KPφ50 |
Features: 1) All-diffused structure 2) Amplifying gate configuration 3) VTM<1.5V at 25°C, 2500A 4) High DV/DT capability; blocking capability up to 2000V 5) For phase control applicationsSpecifications at 125°C: 1) VTM≤2.0V @ ITM=3000A 2) DI/DT = 150A/us 3) VRRM/VDRM : 800-2000V