出生地 |
China |
模式的数量 |
KP&phi 50 |
thyristors Features: 1) All-diffused structure 2) Amplifying gate configuration 3) VTM<1.5V at 25°C, 1000A 4) High DV/DT capability; blocking capability up to 3300V 5) For phase control applicationsSpecifications at 125°C: 1) VTM≤1.5V @ ITM=1000A 2) DI/DT = 150A/us 3) VRRM/VDRM : 2600-3300V