Высокоскоростной Диод переключения на MMBT5401LT1G

High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −150 Vdc Collector−Base Voltage VCBO −160 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −500 mAdc Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate Above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient R JA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient R JA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.