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HC5287 is high breakdown voltage of NPN bipolar transistor.The main process ofmanufacture:high voltage mesa type process,triple diffused process etc.,adoption of fully lastic packge.RoHS product. ELECTRICAL CHARACTERISTICS (Tc=25°C) Parameter Tests conditions Min Max Unit V(BR)CEO IC=10mA,IB=0 700 V V(BR)CBO IC=1mA,IE=0 1200 V V(BR)EBO IE=1mA,IC=0 6 V ICBO VCB=1200V, IE=0 1 mA IEBO VEB=6V, IC=0 10 μA HFE VCE = 5 V, IC = 1 A 15 35 VCE = 5 V, IC = 5 A 6 VCE(sat) IC=3A, IB=0.6A 0.5 V VBE(sat) IC=3A, IB=0.6A 1.3 V tfIC=5A,2IB1=-IB2=2A 0.3 μs ts fH=15.75kHz 4 US ft VCE=10V, IC=0.1A 1.7 MHz HC5287will take the place of 3DD5038