NA25B-П Датчик высокой точности

high accuracy sensor Applications: For the electronic measurement of circuits: AC, DC, pulsed, mixed, with a galvanic isolation between the primary (high power) and the secondary (electronic) circuits. Main technical data: 1. Normal current IPN: 25A rms 2. Measuring range IP: 0 +/-55A 3. Measuring resistance @+85ºC: RMmin RMmax with ±12V @ ±25A: 0Ω 352Ω @ ±55A: 0Ω 118Ω with ±15V @ ±25A: 70Ω 466Ω @ ±55A: 70Ω 170Ω 4. Secondary normal current: 25mA rms 5. Conversion ratio: 1-2-3:1000 6. Supply voltage(+/-5%): +/-12V +/-15V 7. Current consumption: 16mA+ Secondary output current 8. Isolation: Between primary and secondary + test winding + screen: 5kV rms/50Hz/1min Accuracy – Dynamic performance 1. Accuracy @ IPN , TA=+25ºC: +/-0.8% 2. Non-linearity (0 +/-IPN ): +/-0.2% 3. Offset current Io @TA=+25ºC: +/-0.15mA 4. Residual current @ IP=0, after an overload of 3xIPN: less than +/-0.25mA 5. Thermal drift of Io @ 0 oC +70 oC: +/-0.6mA @ -25 oC +85 oC: +/-0.7mA 6. Response time @10% of IP max:<200ns 7. Response time @90% of IP max:≤0.5us 8. di/dt accurately follewed: > 200A/us 9. Frequency bandwidth (-1dB): DC 0 200kHz General data: 1. Operating temperature: -25 oC +85 oC 2. Storage temperature: -40oC +90oC 3. Secondary coil resistance: ≤ 76Ω 4. Weight: 22g 5. Standards: EN 50178 Features: 1. Hall effect measuring principle 2. Galvanic isolation between primary and secondary circuit 3. Insulated plastic case made of white PPO recognized according to UL 94-V0 4. The whole current transducer comply with RoHS Directive completely