фотоэлементов

solar cell/mono-si solar cell/cell/solar/si cell/125 solar cell/high eff% solar cell/mono-si cell/pv cell/small solar cell/power supply/solar panel cell/pv solar/photovoltaic/energyTrough plating PECVD SNF (Silicon Nitride Film) and fully automatic printing with high-purity metal slurry on the excellent printing equipment, our crystalline silicon solar cells are endowed with the following characteristics: 1. High photoelectric conversion efficiency and stable performance.2. Advanced diffusion technology ensuring high degree of uniformity between cells.Size:125mm×125mm3. Uniform PECVD plating leading to the high density.Thickness:200±20μm4. High regularity of printing graphics and highly-sophisticated sintering process insuring satisfactory electrical conductivity.ModelEfficiencyPowerOpen-Circuit VoltageShort-Circuit CurrentWorking VoltageWorking CurrentEFF%Pm(Wp)Voc(mV)Isc(mA)Vm(mV)Im(mI)TJSC17417.4%2.28562054085224.952TJSC17217.2%2.55561853995204.913TJSC17017.0%2.5261753545154.893TJSC16816.8%2.49161653045114.875TJSC16616.6%2.46861552625084.858TJSC16416.4%2.43961352124994.838TJSC16216.2%2.39861152014974.825TJSC16016.0%2.37861051214934.824TJSC15815.8%2.36461050784904.824TJSC15615.6%2.33560950114874.795TJSC15415.4%2.29360850004834.747TJSC15215.2%2.26260249904804.713Zhejiang Tianjing New Energy Science & Technology Co., Ltd. reserves the right to modify the description hereinbefore without sending any notice. Technical Parameters of Tianjingsolar's solar cellssize125 × 125 ± 0.5mmconductivity typeP typeresistivity0.5-3Ωcm or 3-6Ωcmdiameter(excluding non-grinding)150 ± 0.5mmTTV(Total Thickness Variety)≤ 30μmwarp≤ 0.035mmminority carrier's lifetime≥ 10μscrystallographic orientation<100> ± 10thickness of the silicon center200 ± 20μmoxygen content≤ 1.0 × 1018at/cm3carbon content≤ 5.0 × 1016at/cm3dislocation density≤ 3000/ cm2