тиристорный 2P4M К-202 Parameter SymbolValue VRRMmax 400VVDRMmax 400VIT(AV)2AITSM20AI2T 0.4A2SPgm0.5WPg(av)0.1WIfgm0.2AVrgm6VTvj-40 110°cTstg-40 150°
Мощность транзистор 13001 power transistor--13001 1)PACKGAGE:TO-92 2)W:7 3)IC(A):0.3 4)Bvcbo(V):500 5)Bvceo(V):400 6)meet ROHS,SGS,ISO9001 certification 7)chip size:0.83*0.83
поле эффективны транзистор 13003T field effective transistor 13003T 1.PC(W):50 2.W:32 3.IC(A):2 4.Bvcbo(V):700 ,Bvceo(V):400 5.HFE:15-30 6.CHIP SIZE:1.84*1.84 7.high votage capabltlit
NPN транзистор питания 13005T NPN power transistor 13005T 1)PACKAGE:TO-220 2)PC(W):75 3)IC(A):5 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:15-30 7)Meet ROHS,SGS,ISO9001 8)chip size:2.52*
переключение транзистора 13007T Silicon Transistor 13007T 1)package:TO-220 2)PC(W):85 3)Bvcbo(V):700 4)Bvceo(V):400 5)HFE:15-35 6)CHIP SIZE:3.38*3.38 7)IC(A):8 Standard Series Trans
электронная схема circuit electronic -----------Our company stands as a professional manufacturer of POWER TRANSISTORS located in Mainland China. Transistors 13003 Ser
Энергосберегающие лампы транзистор IC Transistor 13003F5: Ic(A) 1.5 Bvcbo( V) 400 W: 20 HFE 15-30 Our company is a professional manufacturer of Power Transistors, located in Mainland
транзисторы комплектующих 13009T component transistors 13009T 1)PAKCAGE:TO-220 2)IC(A):12 3)PC(W):100 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:20-40 7)CHIP SIZE:4.08*4.08 Our company is a
Транзисторы общего назначения 13003F5 Detailed description of general purpose transistors 13003F5
Мощность транзистор производитель 13009T 13009T power transistor manufacturer 1)PC(W):100 2)W:105 3)IC(Q):12 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:20-40 7)CHIP SIZE:4.08*4.08 Our company is t
техническое описание транзистор 13003M4 datasheettransistor the detail description of transistor: 1)PC(W):45 2)IC(A):2 3)Bvcbo(V):700 4)Bvceo(V):400 5)HFE:15-30 6)CHIP SIZE:1.84 7)P
Электронный балласт transistor13001 Electronic ballast transistor---MJE13001 1)package:TO-92 2)W:9 3)IC(A):0.3 4)Bvcbo(V):500 5)Bvceo(V):400 6)COPPER FEET 7)meet ROHS,SGS,ISO9001 certif
Мощный транзистор power transistor--------Transistor 13003TK : Chip Size 1.42 Ic(A)1.2 Bveco(V)400 Bvcbo(V)600 HFE15-30 W 22 Our company is a professional manufacturer
Транзистор Дарлингтона Darlington Transistor HuZhou YiFan Electronic CO., LTD is high-tech enterprise, which specializes in producing semiconductor devices, located in Zhe
люминесцентная лампа транзистор fluorescent lamptransistor 13005TS DETAIL: 1)package:TO-220 2)IC(A):4 3)Bvcbo(V):700 4)Bvceo(V):400 5)HFE:15-30 6)W:40 7)ROHS,SGS,ISO9000 8)COPPER F
силовые транзисторы power transistors 1. Standard Series Transistors (Voltage 400v) TO-92: 13001 13002 13001S 13003S TO-126: 13002 13003C6 13003F5 13003F6 13003S7 13003M
кремниевый транзистор silicon transistor Our company is a professional manufacturer of Power Transistors, located in Mainlad China. Transistors 13003 Series and its cross
переключатель транзисторы the detail description of switch transistor 13003C6 1)PACKAGE:TO-126 2)IC(A):1 3)PC(W):25 4)Bvcbo(V):600 5)Bvceo(V):400 6)HFE:15-30 7)CHIP SIZE:1.30*
Тестирование transistors13003F6 testing transistors13003F6 PCKAGE:TO-126 PC(W):35 IC(A): 1.5 BVcbo(V): 600 BVceo(V): 400 HFE:15-30 CHIP SIZE:1.63*1.6
Мощность транзистор 13009T power transistors13009T 1)PACKAGE:TO-220 2)PC(W)100 3)IC(A):12 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:20-40 7)ROHS,SGS,ISO9001 certification 8)CHIP SIZE
Мощность транзистор power transistor-----Our company is a professional manufacturer of Transistors, located in Mainland China. The main production is 13003 Series power
РФ транзистор RF 13003TF transistor RF transistor 1303TF features: 1.PC(W):40 2.IC(A:1.5 3.Bvcbo(V):600 Bvceo(V):400 4:HFE:15-30 Our production is 13003 Series Tra
Электронные Компоненты Electronic Components Our company is a professional manufacturer of Transistors, located in Mainland China. The main production is 13003 Series Trans
Антистатические полупроводники 13003T Antistatic semiconductors 13003T 1)PACKGAGE:TO-220 2)W:32 3)IC(A):2 4)Bvcbo(V):700 5)Bvceo(V):400 6)meet ROHS,SGS,ISO9001 certification Our company
Тиристорный 1. Standard Series Transistors (Voltage 400v) TO-92: 13001 13002 13001S 13003S TO-126: 13002 13003C6 13003F5 13003F6 13003S7 13003M4 TO-220: 13003TC
транзисторы D880
Транзистор HuZhou YiFan Electronic CO., LTD is high-tech enterprise, which specializes in producing semiconductor devices, located in Zhejiang Mainland China.
транзисторы transistors Our company is a professional manufacturer of Transistors, located in Mainland China. The main production is 13003 Series Transistors whi
XSSY-L36BN ИК-подсветкой XSSY-L36BN IR LED XSSY-L36BN IR LED is a wide viewing and extremely high output power illuminator assembled with a total of36 high efficiency AlGaAs
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FHBAS70 СОТ-23 Диоды Diodes are widely used in computers, communications, electronics, household appliances, automobile electronics, industrial automation instruments, te
Автономный датчик наружной ООН 08 DescriptionColorPackingCarton Size(cm)N.W./G.W.(kgs)1x20'ft (pcs)M.O.Q(pcs)Specification: Power Source: 100 130V/AC 220 240V/AC Power Frequency: 50 6
Микроволновая печь Датчик UN701 DescriptionColorPackingCarton SizeN.W./G.W.(kgs)1x20'ft (pcs)M.O.Q(pcs) Specifications Detection Range:360° Power Supply:100-130VAC 200-240VAC Po
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Круглый мост выпрямительный диод РБ серии RB157, W05-W Round bridge rectifier diode RB157,W10 We offerfull range of STD,FR,UFR,HER,BR,TVS,SKY,SMD,DIACS rectifier diodes with competitive price and high qua
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1A общего назначения диод Шоттки выпрямитель In5819 schottky diode IN5819 IN17-19(20V-40V;1.0A); 1S20-1S60(20V-60V;1.0A); IN5817-IN5819(20V-40V;1.0A); SR120-SR160(20V-60V;1.0A); IN5820-IN5822(20V-40V;3
Diac диоды DB3 (ROHS) diac1.Series: DB6 DC34; DB3:28V-36V; DC34:30V-34V; DB4:35-45V; DB6:56V-70V.2.Mainly used on energy saving lighting or rlectronic ballast.
STD общего назначения 1N5401 диод выпрямителя 1A STD general purpose rectifier diode 1N5401 Maximum forward current:3.0A. Maximum peak reverse voltage:100V
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STD общего назначения 1N4148 диод выпрямителя 1A STD general purpose rectifier diode 1N4148 Maximum forward current:1.5A. Maximum peak reverse voltage:1000V
RL205 STD общего назначения пластиковых пакетов rectifie PFS STD General purpose silicon rectifier diode: RL201 RL202 RL203 RL204 RL205 RL206 RL207 We offerfull range of STD,FR,UFR,HER,BR,TVS,SKY,SMD,DIACS
6A4 STD общего назначения пластиковых пакетов выпрямитель
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35А Площадь однофазный выпрямительный мост диод кб kbpc3510 single phase bridge rectifier diode series: KBPC1505 KBPC151 KBPC152 KBPC154 KBPC156 KBPC158 KBPC1510 KBPC2505 KBPC251 KBPC252 KBPC254 KBPC2
Диодный мост KBL406 (ROHS) Diode bridge 1N4007,1N5408,1N5819,1N4937 FR107,BA159,FR308,BY255,HER308,BY399 6A10,6A4,MB6S,SR360,KBPC3510,KBPC2510We offerfull range of STD,FR,UFR
Пир датчик Specifications: 1) Power source/rated load: a) 220-240V/AC: 1,100W b) 100-130V/AC: 800W 2) Detection distance: 12m (Max. <24°C) 3) Detect
Детектор движения Микроволновая печь Microwave sensor1)power supply220-240VAC 100-130VAC 2)power frequency50/60Hz 3)Installation : wall/ceiling mounting 4)HF system 5.8GHz CW radar,ISM
