МОДУЛЬ
МОДУЛЬ
ДИОД
ТРАНЗИСТОР
ТИРИСТОРА Features: . All Diffused Structure . Spoke Amplifying Gate Configuration . High dV/dt Capability . Pressure Assembled Devic
ТРАНЗИСТОР
ДИОД
ВЫПРЯМИТЕЛЬ
ТРАНЗИСТОР
1W 110 120LM Световой поток высокой мощности LED 350 мА 1W High Power LED with 110 to 120lm Luminous Flux, 350mA Forward Current,3.0 to 3.6V Forward Voltage Model :SP1W120 Suitable for re-flow soldering
3W высокой мощности светодиод с 150 до 180lm Световой поток, High Power LED 3W Warm White 150-180LM 750mA Model No.: SP3W180 Description : Power dissipation :3W ,750mA test forward current Color Temperature :2
Биполярный транзистор SBR13003B3, TS13003,13003 General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode p
Биполярный транзистор SBN13001,13001
быстрое восстановление диод General Description Winsemi's WSAD92-02 series are the state of the Ultra fast recovery rectifiers specifically designed with optimized voltage drop
Диод Шоттки барьер General Description Dual center tap Schottky rectifers suited for high frequency switch power supply and free wheelig diodes, polarity protection app
На MOSFET WFP60N03L, FQD60N03L, IRF3703,3703
Контроль выпрямитель тока кремния диода MCR100-8 Symbol Parameter Value Units Vdrm/Vrrm Repetitive peak off-state voltage 600 V It(rms) RMS on-state current(180°conduction angels) Tl=85°C 0.
Двунаправленный тиристор симистор Триод STK1A60 Features Repetitive Peak off-State Voltage: 600V R.M.S On-State Current(IT(RMS)=1A Low on-state voltage: VTM=1.2(typ.)@ ITM Low reverse and forwar
управляемый выпрямитель, симистор WTPB4A60 контролируется повторно
Мощность МОП SFD60N03L, FQD60N03L, IRF3703,3703 General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been esp
СК WIY2263 1. Burst Mode function 2.Low startup current(4uA) 3.Low operating current (1.4mA) 4.Built-edge blanking 5.Build-in synchronized slope cp,pensation 6.
СК WIS2269N8 1. Burst Mode function 2.Low startup current(6.5uA) 3.Low operating current (2.3mA) 4.Built-edge blanking 5.Build-in synchronized slope cp,pensation
Управления выпрямитель тока кремния диод SCR4C60S Symbol Parameter Value Units Vdrm/Vrrm Repetitive peak off-state voltage 600 V It(rms) RMS on-state current(180°conduction angels) Tl=60°C Ta
Диод Шоттки барьер WSP20D65 General Description Dual center tap Schottky rectifiers suited for high frequency switch power supply and free wheeling diodes, polarity protection a
МОП SFP50N06 Features This Power MOSFET is produced using Winsemi's trench Layout-based process.This technology proves the performances compared with standard par
Двунаправленный тиристор симистор Триод STN1A60, 1A6
S3A ЧЕРЕЗ S3M поверхностного монтажа общего назначения Rectifi FEATURES Glass passivated chip For surface mounted applications Low reverse leakage current Low forward voltage drop High current capability Plastic
SM4001 SM4007 ЧЕРЕЗ Стекло хроматированная Surface Mount FEATURES · For surface mounted applications · Glass passivated chip junction · Low leakage current · Plastic package has
S2A ЧЕРЕЗ S2M поверхностного монтажа общего назначения Rectifi FEATURES Glass passivated chip For surface mounted applications Low reverse leakage current Low forward voltage drop High current capability Plastic
Стабилитрон BZX55C серии Parameter Value Units Storage Temperature Range -65 to +200 °C Maximum Junction Operating Temperature + 200 °C Lead Temperature (1/16 from
MBS ВЫПРЯМИТЕЛИ Features · Surface Mount Package · Glass Passivated Diode Construction · Moisture Resistant Epoxy Case · High Surge Curre
DB101S THRU DB107S FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop,high current capability Reliable low cost construction utilizin
GS1A ЧЕРЕЗ GS1M Surface Mount общего назначения прямых мышц живота Features · For Surface Mount Applications · Extremely Low Thermal Resistance · Easy Pick And Place · High Temp Soldering:
S1A ЧЕРЕЗ S1M поверхностного монтажа общего назначения Rectifi FEATURES Glass passivated chip For surface mounted applications Low reverse leakage current Low forward voltage drop High current capability Plastic
1W стабилитрон DL4728A ЧЕРЕЗ DL4761A Features 1. High reliability 2. Very sharp reverse characteristic 3. Low reverse current level 4. VZ-tolerance± 5% Applications Voltage stabil
FR301 FR307 ЧЕРЕЗ 3.0 Amp Быстрое восстановление Выпрямители FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop High current capability T
Микросхема MSM6260 Packaging Detail:anti-static bags with foam boxsDelivery Detail3-5daysPayment;T/T,western union
Чип QSC6270 ДЛЯ QUALCOMM Packaging Detail:anti-static bags with foam boxsDelivery Detail3-5daysPayment;T/T,western union
Микросхема MSM7225 QUALCOMM ДЛЯ Packaging Detail:anti-static bags with foam boxsDelivery Detail3-5daysPayment;T/T,western union
SMD выпрямительный диод DO-214AC Details of ProductsPlace of Origin: SHENZHEN,GUANGDONG,CHINABrand Name:HKTModel Number: HKT-DO214AC,SODType:Rectifier DiodesPackage Type: DO-214ACMar
SMD транзистор HKT offer not only good products but also continous improvement on quality and service, we are looking forward to growing up with worldwide customer
тиристорный BT134 Values(If there isn't any other condition provide,Tamb=25°c) Symbol Test ConditionsValueIt(rms)Sine-wave full-wave2A VdrmnoMax 600VVrrmnoMax 600V
Регулятор напряжения 7805 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI35VVO5VIO1.5APD2WTopr0 125°cTstg-65 150°c Main funct
транзистор 13003A5 К-126 Characteristics 1)Low switching loss 2)High reliability 3)Great current characteristic 4)Small reverse leak current 5)Great high degree characteristi
Мощность транзистор D882 Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolValueVCBO40VVCEO30VVEBO5VIC3.0APtot(Ta=25°c)1.0WPtot(Tc=25°c
транзистор 13005 К-220 Characteristics 1)Low switching loss 2)High reliability 3)Great current characteristic 4)Small reverse leak current 5)Great high degree characteristi
Мощность транзистор TIP42C Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolValueVCBOTIP42: -40V TIP42C:-100V VCEO TIP42: -40VTIP42C:-100V VEBO-
Регулятор напряжения 78M05 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI25VVO5VIO0.5APD1.25WTopr0 125°cTstg-65 150°c Main fu
Регулятор напряжения 78L05 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI30VVO5VIO0.1APD0.625WTopr0 125°cTstg-65 150°
тиристорный TO410 Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolTest Conditions and ValueIT(RMS)(Tc=60°c,Square-wave,breakover a
