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SMD выпрямительный диод DO-214AC Details of ProductsPlace of Origin: SHENZHEN,GUANGDONG,CHINABrand Name:HKTModel Number: HKT-DO214AC,SODType:Rectifier DiodesPackage Type: DO-214ACMar
SMD транзистор HKT offer not only good products but also continous improvement on quality and service, we are looking forward to growing up with worldwide customer
тиристорный BT134 Values(If there isn't any other condition provide,Tamb=25°c) Symbol Test ConditionsValueIt(rms)Sine-wave full-wave2A VdrmnoMax 600VVrrmnoMax 600V
Регулятор напряжения 7805 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI35VVO5VIO1.5APD2WTopr0 125°cTstg-65 150°c Main funct
транзистор 13003A5 К-126 Characteristics 1)Low switching loss 2)High reliability 3)Great current characteristic 4)Small reverse leak current 5)Great high degree characteristi
Мощность транзистор D882 Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolValueVCBO40VVCEO30VVEBO5VIC3.0APtot(Ta=25°c)1.0WPtot(Tc=25°c
транзистор 13005 К-220 Characteristics 1)Low switching loss 2)High reliability 3)Great current characteristic 4)Small reverse leak current 5)Great high degree characteristi
Мощность транзистор TIP42C Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolValueVCBOTIP42: -40V TIP42C:-100V VCEO TIP42: -40VTIP42C:-100V VEBO-
Регулятор напряжения 78M05 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI25VVO5VIO0.5APD1.25WTopr0 125°cTstg-65 150°c Main fu
Регулятор напряжения 78L05 Value(If there isn't any other condition provided,Tamb=25°c) Parameter SymbolValue VI30VVO5VIO0.1APD0.625WTopr0 125°cTstg-65 150°
тиристорный TO410 Value(Tamb=25°c if there isn't any other condition provided) Parameter SymbolTest Conditions and ValueIT(RMS)(Tc=60°c,Square-wave,breakover a
тиристорный 2P4M К-202 Parameter SymbolValue VRRMmax 400VVDRMmax 400VIT(AV)2AITSM20AI2T 0.4A2SPgm0.5WPg(av)0.1WIfgm0.2AVrgm6VTvj-40 110°cTstg-40 150°
Мощность транзистор 13001 power transistor--13001 1)PACKGAGE:TO-92 2)W:7 3)IC(A):0.3 4)Bvcbo(V):500 5)Bvceo(V):400 6)meet ROHS,SGS,ISO9001 certification 7)chip size:0.83*0.83
поле эффективны транзистор 13003T field effective transistor 13003T 1.PC(W):50 2.W:32 3.IC(A):2 4.Bvcbo(V):700 ,Bvceo(V):400 5.HFE:15-30 6.CHIP SIZE:1.84*1.84 7.high votage capabltlit
NPN транзистор питания 13005T NPN power transistor 13005T 1)PACKAGE:TO-220 2)PC(W):75 3)IC(A):5 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:15-30 7)Meet ROHS,SGS,ISO9001 8)chip size:2.52*
переключение транзистора 13007T Silicon Transistor 13007T 1)package:TO-220 2)PC(W):85 3)Bvcbo(V):700 4)Bvceo(V):400 5)HFE:15-35 6)CHIP SIZE:3.38*3.38 7)IC(A):8 Standard Series Trans
электронная схема circuit electronic -----------Our company stands as a professional manufacturer of POWER TRANSISTORS located in Mainland China. Transistors 13003 Ser
Энергосберегающие лампы транзистор IC Transistor 13003F5: Ic(A) 1.5 Bvcbo( V) 400 W: 20 HFE 15-30 Our company is a professional manufacturer of Power Transistors, located in Mainland
транзисторы комплектующих 13009T component transistors 13009T 1)PAKCAGE:TO-220 2)IC(A):12 3)PC(W):100 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:20-40 7)CHIP SIZE:4.08*4.08 Our company is a
Транзисторы общего назначения 13003F5 Detailed description of general purpose transistors 13003F5
Мощность транзистор производитель 13009T 13009T power transistor manufacturer 1)PC(W):100 2)W:105 3)IC(Q):12 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:20-40 7)CHIP SIZE:4.08*4.08 Our company is t
техническое описание транзистор 13003M4 datasheettransistor the detail description of transistor: 1)PC(W):45 2)IC(A):2 3)Bvcbo(V):700 4)Bvceo(V):400 5)HFE:15-30 6)CHIP SIZE:1.84 7)P
Электронный балласт transistor13001 Electronic ballast transistor---MJE13001 1)package:TO-92 2)W:9 3)IC(A):0.3 4)Bvcbo(V):500 5)Bvceo(V):400 6)COPPER FEET 7)meet ROHS,SGS,ISO9001 certif
Мощный транзистор power transistor--------Transistor 13003TK : Chip Size 1.42 Ic(A)1.2 Bveco(V)400 Bvcbo(V)600 HFE15-30 W 22 Our company is a professional manufacturer
Транзистор Дарлингтона Darlington Transistor HuZhou YiFan Electronic CO., LTD is high-tech enterprise, which specializes in producing semiconductor devices, located in Zhe
люминесцентная лампа транзистор fluorescent lamptransistor 13005TS DETAIL: 1)package:TO-220 2)IC(A):4 3)Bvcbo(V):700 4)Bvceo(V):400 5)HFE:15-30 6)W:40 7)ROHS,SGS,ISO9000 8)COPPER F
силовые транзисторы power transistors 1. Standard Series Transistors (Voltage 400v) TO-92: 13001 13002 13001S 13003S TO-126: 13002 13003C6 13003F5 13003F6 13003S7 13003M
кремниевый транзистор silicon transistor Our company is a professional manufacturer of Power Transistors, located in Mainlad China. Transistors 13003 Series and its cross
переключатель транзисторы the detail description of switch transistor 13003C6 1)PACKAGE:TO-126 2)IC(A):1 3)PC(W):25 4)Bvcbo(V):600 5)Bvceo(V):400 6)HFE:15-30 7)CHIP SIZE:1.30*
Тестирование transistors13003F6 testing transistors13003F6 PCKAGE:TO-126 PC(W):35 IC(A): 1.5 BVcbo(V): 600 BVceo(V): 400 HFE:15-30 CHIP SIZE:1.63*1.6
Мощность транзистор 13009T power transistors13009T 1)PACKAGE:TO-220 2)PC(W)100 3)IC(A):12 4)Bvcbo(V):700 5)Bvceo(V):400 6)HFE:20-40 7)ROHS,SGS,ISO9001 certification 8)CHIP SIZE
Мощность транзистор power transistor-----Our company is a professional manufacturer of Transistors, located in Mainland China. The main production is 13003 Series power
РФ транзистор RF 13003TF transistor RF transistor 1303TF features: 1.PC(W):40 2.IC(A:1.5 3.Bvcbo(V):600 Bvceo(V):400 4:HFE:15-30 Our production is 13003 Series Tra
Электронные Компоненты Electronic Components Our company is a professional manufacturer of Transistors, located in Mainland China. The main production is 13003 Series Trans
Антистатические полупроводники 13003T Antistatic semiconductors 13003T 1)PACKGAGE:TO-220 2)W:32 3)IC(A):2 4)Bvcbo(V):700 5)Bvceo(V):400 6)meet ROHS,SGS,ISO9001 certification Our company
Тиристорный 1. Standard Series Transistors (Voltage 400v) TO-92: 13001 13002 13001S 13003S TO-126: 13002 13003C6 13003F5 13003F6 13003S7 13003M4 TO-220: 13003TC
транзисторы D880
Транзистор HuZhou YiFan Electronic CO., LTD is high-tech enterprise, which specializes in producing semiconductor devices, located in Zhejiang Mainland China.
транзисторы transistors Our company is a professional manufacturer of Transistors, located in Mainland China. The main production is 13003 Series Transistors whi
XSSY-L36BN ИК-подсветкой XSSY-L36BN IR LED XSSY-L36BN IR LED is a wide viewing and extremely high output power illuminator assembled with a total of36 high efficiency AlGaAs
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FHBAS70 СОТ-23 Диоды Diodes are widely used in computers, communications, electronics, household appliances, automobile electronics, industrial automation instruments, te
Автономный датчик наружной ООН 08 DescriptionColorPackingCarton Size(cm)N.W./G.W.(kgs)1x20'ft (pcs)M.O.Q(pcs)Specification: Power Source: 100 130V/AC 220 240V/AC Power Frequency: 50 6
Микроволновая печь Датчик UN701 DescriptionColorPackingCarton SizeN.W./G.W.(kgs)1x20'ft (pcs)M.O.Q(pcs) Specifications Detection Range:360° Power Supply:100-130VAC 200-240VAC Po
Высокое качество in4007 диодов (ROHS) M1-M7 PACKAGE SMA(DO-214A) We offerfull range of STD,FR,UFR,HER,BR,TVS,SKY,SMD,DIACS rectifier diodes with competitive price and high quality: 1,Sili
R3000 Высоковольтные диоды R3000 high voltage diodes 1.Brand:PFS 2.Material:100%copper 3.lead wire size:0.7*58mm 4.3000V 0.2A D0-41 FEATURESLow leakageHigh surge capability Hi
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