Silicon photodiode

ModelActive Area(mm)Responsivity(μA/μw)Dark Current(μA)Reverse Breakdown Voltage V) Working voltage(V)Rise time(ns)Capacity(pF)PackageEV110110.25 0.32 (λ1=1.06μm) ≥0.5 (λ2=0.85μm) ≤0.005≥100 12 502≤2TO windowEV110220.25 0.32 (λ1=1.06μm) ≥0.5 (λ2=0.85μm) ≤0.05≥100 12 503≤4TO windowEV110440.25 0.32 (λ1=1.06μm) ≥0.5 (λ2=0.85μm) ≤0.2≥100 12 505≤8TO windowEV110660.25 0.32 (λ1=1.06μm) ≥0.5 (λ2=0.85μm) ≤0.5≥100 12 507≤12TO windowEV110880.25 0.32 (λ1=1.06μm) ≥0.5 (λ2=0.85μm) ≤0.8≥100 12 508≤20TO windowEV1110100.25 0.32 (λ1=1.06μm) ≥0.5 (λ2=0.85μm) ≤1≥80 12 5012≤20TO windowEV1114140.25 0.32 (λ1=1.06μm) ≥0.5 (λ2=0.85μm) ≤2≥80 12 5015≤20TO window