Vertikalen doppelt diffundierten MOSFET Transistor CS2N60

TheCS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time,low gate charge,lou on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swiching applications in power suplies,PWM motor controls,high efficient DC to DC converters and bridge circuits. BRAND :HC MODEL :Vertical Double-diffused MOSFET Package type(model) : TO-220Package material : plastic package frame : plane Material : si polarity : Frequency :low power: smallVDSS VGS=0V, ID=250 uA600VRDS(on) VGS=10V, ID=1.5A4.5ΩVGS(th)VDS= VGS, ID=250μA 2 4 V y21SVDS= 15V, ID=1.5A1.4SIDSSVDS= 600V ,VGS=0V1μAIGSSVGS=±30V±100nAtd(off) ID = 2.0A, VDD = 300V VGS = 10V, RG = 1830nSCiSSVGS = 0V VDS = 25Vf = 1.0MHz330pFVSDIS=2.0A, VGS=0V1.5V